Systems and methods of self-aligned trench mosfet contacts

ABSTRACT

Systems and methods include semiconductor devices made by forming hard mask pillars on a surface of a substrate, forming sacrificial spacers on a first side of each hard mask pillar and a second side of each hard mask pillar. The open gaps may be formed between adjacent sacrificial spacers. The semiconductor devices may also be formed by etching the hard mask pillars to form pillar gaps, etching gate trenches into the substrate through the open gaps and the pillar gaps, forming a gate electrode within the gate trenches, implanting channels and sources in the substrate below the sacrificial spacers, forming an insulator layer around the sacrificial spacers, etching the sacrificial spacers to form contact trenches within the substrate, and filling the contact trenches with a conductive material to form contacts.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 62/860,959, filed on Jun. 13, 2019, the entire contentsof which is incorporated herein by reference.

BACKGROUND

For trench MOSFET devices, reducing the resistance of the channel region(i.e., R_(ON)) allows more current to travel through the switch.Lowering the device pitch of the semiconductor circuit is one way toachieve a lower R_(ON). One way to decrease the device pitch is to uselithographic processes that locate the devices closer to one another ona substrate. For current trench MOSFET manufacturing processes,lithographic capabilities are limited to a minimum device pitch of about200 nm or 300 nm. For example, a KrF scanner has a minimum of about 300nm of device pitch, and an ArF scanner has a minimum of about 200 nm ofdevice pitch. Reducing the device pitch beyond the minimum lithographiccapabilities requires additional techniques.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are described with reference to the following figures. Thesame numbers are used throughout the figures to reference like featuresand components. The features depicted in the figures are not necessarilyshown to scale. Certain features of the embodiments may be shownexaggerated in scale or in somewhat schematic form, and some details ofelements may not be shown in the interest of clarity and conciseness.

FIG. 1 is a flowchart of a fabrication process for an embodiment of asemiconductor device;

FIGS. 2-5 are cross-sectional side views of an embodiment of asemiconductor device during the fabrication process;

FIG. 6 is a cross-sectional top view of the embodiment of thesemiconductor device;

FIGS. 7-14 are cross-sectional side views of the embodiment of thesemiconductor device during the fabrication process;

FIG. 15 is a cross-sectional top view of the embodiment of theembodiment of the semiconductor device;

FIG. 16 is a flowchart of a possible fabrication process for a secondembodiment of a semiconductor device; and

FIGS. 17-20 are cross-sectional side views of a second embodiment of asemiconductor device during the fabrication process.

DETAILED DESCRIPTION OF THE DRAWINGS

The embodiments disclosed here include using spacers during fabricationof a semiconductor device to decrease the device pitch without changingthe lithography processes. Specifically, embodiments may include formingsacrificial spacers on either side of a hard mask component (e.g., hardmask pillar), and then removing the sacrificial spacers later in thefabrication process to form contact trenches and contacts. Theseresulting contacts are aligned with the gate trenches, the device pitchis about half of the lithographic limit, the device has a higherbody/source ratio of a width with a smaller Si mesa due to theself-aligning double patterning scheme described herein. As used herein,“self-align” means that the contacts and electrodes are formed to alignwith each other without a lithographic process for each contact orelectrode.

FIG. 1 is a flowchart of a fabrication process 1000 for an embodiment ofa semiconductor device 100.

FIG. 2 is a cross-sectional side view of an embodiment of thesemiconductor device 100 during the fabrication process. Thesemiconductor device 100 is fabricated on the substrate 102, which mayinclude a variety of materials such as silicon, germanium, galliumarsenide, among others.

In the illustrated embodiment of the process 1000, at stage 1020, thesemiconductor device 100 includes a hard mask pillar 106 that has beenformed on the substrate 102. The hard mask pillar 106 may be formedthrough several processes such as depositing or growing a uniform layerof hard mask material on the substrate 102 followed by patterning thelayer, and then etching the pattern so that only certain areas of thehard mask (e.g., the hard mask pillar 106) remain on the substrate 102.The lithographic pattern may also be applied before the hard maskmaterial is deposited or grown on the substrate 102, such that the hardmask material is deposited in certain areas of the pattern while otherareas (i.e., areas covered by the lithographic photoresist) do notreceive the hard mask material in the first place. The lithography foretching the hard mask/hard mask pillar 106 may include KrF scannerlithography processing, ArF scanner lithography processing, or others.

Following the lithographic processes, the hard mask pillar 106 may bethinned beyond the pattern through a controlled etch process, such as achemical wash, to leave the thinned hard mask pillar 106 with a specificdesired thickness 108 Thinning the hard mask pillar 106 enables the hardmask pillar 106 to have a thickness 108 that is smaller than a minimumlithography limit of the lithography processing capability. The minimumlithography limit depends on the wavelength of the light that is used toilluminate the mask onto the photoresist on the semiconductor device100. For example, KrF scanner lithography processing has a wavelengththat has a minimum lithography limit of 300 nm of device pitch. ArFscanner lithography processing has wavelength that has a minimumlithography limit of about 200 nm of device pitch. As explained below,this can also translate into other components of the semiconductordevice 100 being smaller than the minimum lithography limit of thelithography processing capability. The hard mask pillar 106 in FIG. 2may be one of many hard mask pillars 106 present on the substrate 102 toform a semiconductor circuit.

FIG. 3 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during the fabrication process 1000. Asillustrated at stage 1030, the semiconductor device 100 includessacrificial spacers 110 a, 110 b formed around the hard mask pillar 106.The substrate 102 may be cleaned before application of the sacrificialspacers 110 a, 110 b so that there is no oxide between the substrate 102and the sacrificial spacers 110 a, 110 b. The cleaning ensures that thesacrificial spacers 110 a, 110 b remain attached to the substrate 102 ifoxide-etching chemicals are used any time during the process 1000. Thesacrificial spacers 110 a, 110 b may be formed using a variety oftechniques. For example, a nitride layer may be uniformly deposited as afilm over the entire surface of the substrate 102. The nitride layer maythen subsequently be etched down to form the sacrificial spacers 110 aand 110 b.

Thus, when the nitride layer is etched, the semiconductor device 100includes a first sacrificial spacer 110 a on a first side 112 a of thehard mask 106, a second sacrificial spacer 110 b on a second side 112 bof the hard mask 106, and open gaps 114 outside of the sacrificialspacers 110 a, 110 b. The first sacrificial spacer 110 a may be the samesize, or a different size from the second sacrificial spacer 110 b. Thepattern of gap 114, first sacrificial spacer 110 a, hard mask pillar106, second sacrificial spacer 110 b, and gap 114 may be repeated, asnecessary, to cover the substrate 102, or the area of the substrate 102designed for a particular use (e.g., power current).

FIG. 4 illustrates, at stage 1040, the hard mask pillar 106 has beenetched away to form an additional gap 115. The etching process isconfigured to remove the hard mask pillar 106 without interacting withthe sacrificial spacers 110 a, 110 b or the substrate 102. This is onereason why the substrate 102 may be cleaned before depositing thesacrificial spacers 110 a, 110 b since the substrate 102 may have nativeoxide that is etched by the same treatment as the hard mask pillar 106.

In the illustrated embodiment, the first sacrificial spacer 110 aincludes a point 118 located between a slant side 120 and a point side122. The point side 122 and the slant side 120 may be angled differentlyrelative to the substrate 102 and/or curved differently. The gaps 114,115 on either side of the first sacrificial spacer 110 a, therefore, mayalso be different shapes. In certain embodiments (see FIG. 18 below),the sacrificial spacers 110 a, 110 b may be polished to remove the point118 so that the sacrificial spacers 110 a, 110 b are squared off toincrease the likelihood that each gap 114, 115 uniformly receives a wetetch process to form the trenches described below.

FIG. 5 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1050 of the fabrication process1000. The substrate 102 is etched in each gap 114, 115 to form gatetrenches 116. The gate trenches 116 may be etched without significantchange to the shape or size of the sacrificial spacers 110 a, 110 b. Forexample, the gate trenches 116 may be etched using a wet or dry etchingprocess that etches the material of the substrate 102 without chemicallyinteracting with the nitride of the sacrificial spacers 110 a, 110 b.The shape of the sacrificial spacers 110 a, 110 b (e.g., changed throughpolishing or etching) may also be used to adjust the shape of the gatetrenches 116. For example, the gate trenches 116 may be deeper on aslant side 120 of the first sacrificial spacer 110 a when thesacrificial spacer 110 a has not been polished, since additional etchingmaterial may access the substrate 102 due to the broader gap 114. InFIG. 5 the sides of the gate trench 116 are illustrated as perpendicularwith a constant width 124, but other shapes and/or angles of the gatetrenches 116 may be etched into the substrate 102 as well. The width 124may be the same size as the width 108 of the hard mask pillar 106 andmay be, for example, less than 100 nm. Between the gate trenches 116there is a Si mesa 130 with a width 128. As an example, the Si mesawidth 128 may be between 60 nm and 200 nm. As highlighted above, thiswidth 128 may be less than the lithographic limit that would otherwisebe achievable for the semiconductor device 100. In some embodiments, thewidth 128 may be half of the lithographic limit since the sacrificialspacers 110 a, 110 b are not primarily formed through lithographicprocesses. As explained in detail below, the Si mesa 130 may beimplanted with dopants to form channel, source, and body regions.

FIG. 6 is a cross-sectional top view of the embodiment of thesemiconductor device 100 at stage 1050. The top view shows that the gatetrench 116 extends along the substrate 102. As described above withrespect to the hard mask pillars 106, the gate trenches 116 may beformed as a plurality of parallel gate trenches 116 over the surface ofthe substrate 102. The semiconductor device 100 includes body regions138 and source regions 140 that are designed to receive different typesof doping. The body region 138 supplies the source region 130 andchannel (see FIG. 11) with the positive charges or negative chargesneeded to turn on the semiconductor device 100 during operation. As theSi mesa width 128 narrows in designs of the semiconductor device 100, ahigher ratio of the width occupied by the body region 138 and the sourceregion 140 may be required to avoid parasitic bipolar transistor action.This condition may be exasperated if source contacts are not alignedalong the Si mesa 130. The contacts disclosed here are self-aligned tothe gate trenches 116 along the body region 138 and source regions 140to avoid the parasitic bipolar transistor action.

FIG. 7 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1060 of the fabrication process1000. The sacrificial spacers 110 a, 110 b have been thinned ordecreased in cross-sectional area. The pull back is accomplished throughetching processes that etch the sacrificial spacers 110 a, 110 b whilehaving minimal effect on the Si mesa 130. As illustrated, the result ofthe pullback is that the Si mesa 130 is wider than the sacrificialspacers 110 a, 110 b.

FIG. 8 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1070 of the fabrication process1000. The semiconductor device 100 has formed a layer of gate insulatoror gate oxide 132 within the gate trenches 116 and on exposed areas ofthe Si mesa 130. The gate oxide 132 may be formed, for example, bygrowing silicon dioxide on the substrate 102.

FIG. 9 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during at stage 1080 of the fabrication process1000. The gate trenches 116 are filled with polysilicon 134 to form agate electrode 136. The polysilicon 134 may be layered over thesacrificial spacers 110 a, 110 b and annealed.

FIG. 10 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1090 of the fabrication process1000. The polysilicon 134 has been diminished so that only the gateelectrode 136 remains within the gate trenches 116. Wet or dry etchingprocesses may be used to etch the polysilicon 134 without affecting thesacrificial spacers 110, gate oxide 132, or the silicon mesa 130.

FIG. 11 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1100 of the fabrication process1000. The Si mesa 130 is implanted with one or more dopants to formchannels 140 a, 140 b and sources 142 a, 142 b in the substrate 102. Thedopants for the channel 140 a, 140 b may include, for example, Boron,Boron ions, or other similar dopants that provide positively chargedholes, while the dopants for the source 142 a, 142 b may include, forexample, Arsenic, Arsenic ions, or other similar dopants that providenegatively charged electrons to the semiconductor device 100. The firstsacrificial spacer 110 a has a first channel 140 a and a first source142 a implanted beneath, and the second sacrificial spacer 110 b has asecond channel 140 b and a second source 142 b implanted beneath. It ispossible for the dopant to be implanted straight into the Si mesa 130,but the dopants entering the Si mesa 130 directly below the sacrificialspacers 110 a would have to pass through the sacrificial spacers 110 a.The implanting energy would thus be different for different areas of theSi mesa 130, which complicates the fabrication process. Thus, thechannels 140 a, 140 b and sources 142 a, 142 b may be implanted at anangle 144 to avoid the sacrificial spacers 110 a, 110 b duringimplantation. The angle 144 of implanting the dopant may result in acurved dopant profile such as 146 a, 146 b, 148 a, 148 b that form atthe bottom of the channel 140 a, 140 b and source 142 a, 142 b,respectively. The angle 144 may be between 3 and 10 degrees, such as 7degrees to implant the dopant into the Si mesa 130 and avoid thesacrificial spacer 110 a, 110 b.

FIG. 12 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1110 of the fabrication process1000. The semiconductor device 100 includes an insulator layer 160formed on top of the substrate 102 and around the sacrificial spacers110 a, 110 b. The insulator layer 160 may include a variety of materialsfor insulating the substrate 102 from a future source plate or otherconducting components that may be present above the insulator 160. Forexample, the insulator may include oxide, glass, or other materials.Furthermore, the insulator 160 may be annealed, but in some examples theinsulator 160 is not annealed.

FIG. 13 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1120 of the fabrication process1000. The insulator layer 160 has been etched so that a top surface 162falls at least below the point 118 of the sacrificial spacers 110 a, 110b. This enables an etch process to remove the sacrificial spacers 110 a,110 b from within the insulator layer 160 to form contact trenches 164a, 164 b. The contact trenches 164 a, 164 b etched through the topsurface 162 into the insulator layer 160 and into the source regions 142a, 142 b. Additionally, as illustrated the contact trenches 164 a, 164 bmay be etched through the source regions 142 a, 142 b such that thecontact trenches protrude to the channel 140 a, 140 b. In certain otherexamples, the contact trenches 164 a, 164 b may be etched to differentdepths within the substrate 102. For instance, the semiconductor device100 may be formed so that the first contact trench extends through thefirst source 142 a while a second contact trench 164 b is etched to justcontact the second source 142 b without punching through, or vice versa.

FIG. 14 is a cross-sectional side view of the embodiment of thesemiconductor device 100 during a stage 1130 of the fabrication process1000. The contact trenches 164 a, 164 b have been filled with metal orother conductive material to form contacts 166 a, 166 b. The contacts166 a, 166 b may electrically connect and include the same conductivematerial as a source plate 168 that electrically connects thesemiconductor device 100 to a different device or to a power source.

The process 1000 ends at a stage 1140 with the contacts 166 a, 166 bformed and aligned to the Si mesa 130. Further treatments may beconducted on the semiconductor device 100 before it is a finishedproduct. As shown in the cross-sectional top view of FIG. 15, at stage1140 the contacts 166 a, 166 b are self-aligned with the gate trench 116independent of the lithographic process that was used during anyprevious processes. Charging the gate electrode 136 thus enables acurrent to flow through the substrate 102 and the source plate 168through a narrow Si mesa 130 while still using normal lithographyscanners.

FIG. 16 is a flowchart of a possible fabrication process 2000 for asecond embodiment of a semiconductor device 200. The semiconductordevice 200 may be fabricated in the order indicated in the flowchart,but this is not necessarily required. Furthermore, as with thesemiconductor device 100 described above, the semiconductor device 200may be fabricated as part of a larger circuit, and the process 2000 maystart at a stage 2010 after completion of additional or alternativetreatments. The process 2000 may include several process features thatare not illustrated, but have been described above. For example, at astage 2020, the semiconductor device 200 may have a hard mask pillar 208formed thereon, and at a stage 2030, sacrificial spacers 210 a, 210 b,210 c, 210 d formed as well. In the process 2000, the semiconductordevice 200 may include additional or alternative treatments as describedbelow.

FIG. 17 is a cross-sectional side view of a second embodiment of thesemiconductor device 200 during a stage 2033 of the fabrication process2000. FIG. 17 illustrates the additional or alternative treatment beforethe hard mask pillar 208 is etched as described above at stage 1040 andFIG. 4. That is, once the hard mask pillar 208 and sacrificial spacers210 a, 210 b, 210 c, 210 d have been formed on a substrate 202, a fillermaterial 270, such as glass or doped glass, is formed over thesacrificial spacers 210 and the hard mask pillar 208. The fillermaterial 270 fills a gap 214 between the sacrificial spacers 210 a, 210b, 210 c, 210 d that is not occupied by the hard mask pillar 208.

FIG. 18 is a cross-sectional side view of the second embodiment of thesemiconductor device 200 during a stage 2036 of the fabrication process2000. The filler material 270, the sacrificial spacers 210 a, 210 b, 210c, 210 d, and the hard mask pillar 208 are polished so that a topsurface 272 is level with the substrate 202. This polishing makes thetop surface 272 of the sacrificial spacers 210 a, 210 b, 210 c, 210 dflat, such that both sides of the sacrificial spacer are even.

FIG. 19 is a cross-sectional side view of the second embodiment of asemiconductor device during a stage 2040 of the fabrication process2000. As illustrated above at FIG. 3, the hard mask 208 may be removedand/or etched with minimal effect on the sacrificial spacers 210.Furthermore, the filler material 270 may also be removed and/or etchedwith minimal effect on the sacrificial spacers 210 a, 210 b, 210 c, 210d. After etching of the hard mask pillars 208 and the filler material270, the semiconductor device 200 has gaps 214 on each side of thesacrificial spacers 210. The gaps 214 may therefore be used to etch gatetrenches 216, as shown in the cross-sectional side view of FIG. 20.Thus, including the additional or alternative treatment of layering thefiller material 270 may be beneficial in creating a top surface 272 thatis flat, which can result in better uniformity in the depth and width ofthe gate trenches 216. The process 2000 may include the other treatmentsmentioned above with respect to FIG. 1 to form channels, sources, andsource contacts within the semiconductor device 200. The process 2000ends 2140 after the source contacts are filled with a conductivematerial, and the semiconductor 200 is ready to further treatment.

1.-11. (canceled)
 12. A semiconductor device, comprising: a siliconsubstrate comprising a surface; a gate electrode formed in a gate trenchextending into the substrate from the surface; a channel region adjacentto the gate electrode comprising a non-uniform channel dopant profile; asource region adjacent to the gate electrode between the surface and thechannel region, comprising a non-uniform source dopant profile; aninsulator layer formed above the substrate; and a source contactextending through the insulator layer, wherein the source contactcomprises a width that is less than a minimum lithography limit for aprocessing capability.
 13. The semiconductor device of claim 12, whereinthe channel dopant profile comprises a curved profile, wherein a dopantconcentration directly below the source contact is lower than a dopantconcentration further from the source contact.
 14. The semiconductordevice of claim 12, wherein the source dopant profile comprises a curvedprofile, wherein a dopant concentration directly below the sourcecontact is lower than a dopant concentration further from the sourcecontact.
 15. The semiconductor device of claim 12, wherein the sourcecontact is self-aligned with the gate electrode.
 16. The semiconductordevice of claim 12, comprising a Si mesa width less than 200 nm.
 17. Thesemiconductor device of claim 12, comprising a gate trench width of lessthan 100 nm.
 18. The semiconductor device of claim 12, wherein thesource contact extends through the source region and contacts thechannel region.
 19. The semiconductor device of claim 12, comprising aratio of the width of the body region to a width of the source regionthat is greater than two.
 20. The semiconductor device of claim 12,comprising an additional gate electrode formed in an additional gatetrench located opposite the channel from the gate trench.